Ultraviolet Electroluminescence From n-ZnO–SiO$_{2}$–ZnO Nanocomposite/p-GaN Heterojunction Light-Emitting Diodes at Forward and Reverse Bias

摘要

Ultraviolet (UV) light-emitting diodes composed of n-ZnO : Al–SiO$_{2}$–ZnO nanocomposite/p-GaN : Mg heterojunction were fabricated on the (0002) Al$_{2}$O$_{3}$ substrate. A SiO$_{2}$ layer embedded with ZnO nanodots was prepared on the p-type GaN using spin-on coating of SiO$_{2}$ nanoparticles together with atomic layer deposition (ALD). An n-type Al-doped ZnO layer was deposited also by ALD. The SiO$_{2}$ –ZnO nanocomposite layer accomplishes a role of the current blocking layer and also causes, by its low refractive index, the increase in the light extraction efficiency from n-ZnO. Significant UV electroluminescence from n-ZnO was achieved at a low forward-bias current of 1.8 mA. Strong UV emission arising from impact ionization in GaN, ZnO, and GaN : Mg states was also observed at reverse breakdown bias.