机译:n-ZnO线阵列/ p-GaN薄膜异质结发光二极管的反向偏置驱动双色电致发光
Faculty of Nanoscience and Advanced Materials Engineering, Graphene Research Institute, and Hybrid Materials Research Center, Sejong University, Seoul 05006, South Korea;
Faculty of Nanoscience and Advanced Materials Engineering, Graphene Research Institute, and Hybrid Materials Research Center, Sejong University, Seoul 05006, South Korea;
School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, United Kingdom;
Department of Materials Science and Engineering, Pohang University of Science and Technology(POSTECH), Pohang 790-784, South Korea;
Department of Materials Science and Engineering, KAIST, Daejeon 34141, South Korea;
Department of Materials Science and Engineering, Pohang University of Science and Technology(POSTECH), Pohang 790-784, South Korea;
UNIST Central Research Facilities (UCRF), UNIST, Ulsan 44919, South Korea;
Faculty of Nanoscience and Advanced Materials Engineering, Graphene Research Institute, and Hybrid Materials Research Center, Sejong University, Seoul 05006, South Korea;
机译:n-ZnO薄膜/ ZnO纳米线阵列/ p-GaN薄膜异质结发光二极管中ZnO纳米线的电致发光
机译:氢对n-ZnO纳米棒/ p-GaN薄膜异质结发光二极管电致发光的影响
机译:氢对n-ZnO纳米棒/ p-GaN薄膜异质结发光二极管电致发光的影响
机译:P-GaN / MgO / N-ZnO异质结发光二极管的电致发光
机译:氧化铟基透明导电氧化物薄膜的金属有机化学气相沉积:前体合成,膜生长和表征及其在聚合物发光二极管器件中的应用。
机译:使用具有增强发光的n-ZnO / NiO / p-GaN异质结制造白色发光二极管
机译:n-ZnO / p-GaN异质结发光二极管,具有掩埋极化诱导隧道结