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Ultra-Violet Electroluminescence of ZnO Nanorods/MEH-PPV Heterojunctions by Optimizing Their Thickness and Using AZO as a Transparent Conductive Electrode

机译:ZnO纳米棒/ MEH-PPV异质结的紫外光致发光通过优化其厚度并使用AZO作为透明导电电极来实现

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摘要

In this paper, a series of ITO/ZnO/ZnO nanorods/MEH-PPV/Al were prepared with different thicknesses of MEH-PPV that were changed from 15, 10 to 7 nm. The electric field in the devices was analyzed. An increase in the electric field on ZnO made hole injection easy and the electrons tunnel fast through thinner MEH-PPV to ZnO. This made the carriers prefer to recombine inside the ZnO layer, and the emission of ZnO was predominant under direct current (DC) bias. Furthermore, another device was fabricated with the structure of AZO (Al-doped ZnO)/ZnO/ZnO nanorods/MEH-PPV/Al. Ultra-violet (UV) electroluminescence (EL) at 387 nm from ZnO band edge emission was realized under DC bias. The turn-on voltage of the devices having AZO as the electrode is lower than that of ITO, and the EL power is enhanced. This work also studies the effect of inserting LiF underneath the Al electrode and above the layer of MEH-PPV. The LiF film inserted caused an obvious decrease in turn-on voltage of the devices and a pronounced increase in the EL power. The mechanism of electroluminescence enhancement is also discussed.
机译:在本文中,制备了一系列ITO / ZnO / ZnO纳米棒/ MEH-PPV / Al,其MEH-PPV的厚度从15、10变为7 nm。分析了设备中的电场。 ZnO上电场的增加使空穴注入变得容易,并且电子通过较薄的MEH-PPV快速隧穿至ZnO。这使得载流子倾向于在ZnO层内部复合,并且在直流(DC)偏压下ZnO的发射占主导地位。此外,制造了具有AZO(Al掺杂的ZnO)/ ZnO / ZnO纳米棒/ MEH-PPV / Al的结构的另一器件。在直流偏置下,实现了ZnO边沿发射在387 nm处的紫外(UV)电致发光(EL)。具有AZO作为电极的器件的开启电压低于ITO的开启电压,并且提高了EL功率。这项工作还研究了将LiF插入Al电极下方和MEH-PPV层上方的效果。插入的LiF膜导致器件的开启电压明显降低,并且EL功率显着增加。还讨论了电致发光增强的机理。

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