Efficiency Limiting Mechanisms in 1.2–1.3 μm GaInAs/GaAsSb ‘W’ Lasers

机译：1.2–1.3μmGaInAs / GaAsSb'W'激光器的效率限制机制

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We characterize the performance of 1.2 and 1.3 μm `W' lasers using temperature and high-pressure. Both devices exhibit a high characteristic temperature. Pressure data indicates a reduced influence of Auger recombination compared to conventional type-I devices operating in the same wavelength range.

机译：我们使用温度和高压来表征1.2和1.3μm'W'激光器的性能。两种器件均具有较高的特征温度。压力数据表明，与在相同波长范围内运行的常规I型设备相比，俄歇复合的影响减小。

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来源
《International Semiconductor Laser Conference》|2018年|1-2|共2页
会议地点 Santa Fe(US)
作者
Timothy D. Eales; Igor P. Marko; Chris Kemp; Christian Fuchs; Wolfgang Stolz; Stephen J. Sweeney;
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作者单位

Advanced Technology Institute and Department of Physics University of Surrey Guildford GU2 7XH UK;

Materials Sciences Center and Department of Physics Philipps-Universität Marburg Renthof 5 35032 Marburg Germany;

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关键词
Temperature dependence; Temperature measurement; Threshold current; Radiative recombination; Temperature distribution; Fiber lasers;

机译：温度依赖性；温度测量；阈值电流；辐射复合；温度分布光纤激光器;

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1. The influence of growth conditions on carrier recombination mechanisms in 1.3 μm GaAsSb/GaAs quantum well lasers [J] . Hossain N., Hild K., Jin S. R., Applied Physics Letters . 2013,第4期

机译：生长条件对1.3μmGaAsSb / GaAs量子阱激光器中载流子复合机理的影响
2. The influence of growth conditions on carrier recombination mechanisms in 1.3μm GaAsSb/GaAs quantum well lasers [J] . N. Hossain, K. Hild, S. Ft. Jin, Applied Physics Letters . 2013,第4期

机译：生长条件对1.3μmGaAsSb / GaAs量子阱激光器中载流子复合机理的影响
3. Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 //m GaAsSb/GaAs vertical cavity surface emitting lasers [J] . Konstanze Hild, Igor P. Marko, S. R. Johnson, Applied Physics Letters . 2011,第7期

机译：失谐和非辐射复合对1.3 // m GaAsSb / GaAs垂直腔面发射激光器的温度依赖性的影响
4. Efficiency Limiting Mechanisms in 1.2–1.3 μm GaInAs/GaAsSb ‘W’ Lasers [C] . Timothy D. Eales, Igor P. Marko, Chris Kemp, IEEE International Semiconductor Laser Conference . 2018

机译：1.2-1.3μm的效率限制机制在1.2-1.3μmgainas / gaassb'w'激光中
5. The L-type voltage-gated calcium channels: The role of Cav1.2 in pancreatic B cells and new perspective on the molecular pharmacology of Cav1.3. [D] . Wang, Yuchen. 2015

机译：L型电压门控钙通道：Cav1.2在胰腺B细胞中的作用以及Cav1.3分子药理学的新观点。
6. Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers [O] . Thomas H Loeber, Dirk Hoffmann, Henning Fouckhardt 2015

机译：GaAs上密集的自组织GaAsSb量子点，用于高效激光器
7. The influence of growth conditions on carrier recombination mechanisms in 1.3 mu m GaAsSb/GaAs quantum well lasers [O] . Hossain, N, Hild, K, Jin, SR, 2013

机译：生长条件对1.3μmGaAsSb / GaAs量子阱激光器中载流子复合机理的影响

Efficiency Limiting Mechanisms in 1.2–1.3 μm GaInAs/GaAsSb ‘W’ Lasers

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