Laser diode operable in 1.3 μm or 1.5 μm wavelength band with improved efficiency

摘要

A laser diode includes an active layer of a group III-V compound semiconductor device containing N and As as the group V elements. The active layer has exposed lateral edges wherein the N atoms are substituted by the As atoms at the exposed lateral edges by an annealing process conducted in a AsH₃ atmosphere.