Laser diode operable in 1.3 amp;mgr;m or 1.5 amp;mgr;m wavelength band with improved efficiency

摘要

A laser diode includes an active layer of a group III-V compound semiconductor device containing N and As as the group V elements. The active layer has exposed lateral edges wherein the N atoms are substituted by the As atoms at the exposed lateral edges by an annealing process conducted in a AsH.sub.3 atmosphere.