Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon

机译：硅上单片1.3μmInAs / GaAs量子点激光器的动态特性

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摘要

Small-signal experiments with a 2.5 mm-long quantum dot narrow ridge-waveguide laser on silicon show a modulation bandwidth of 1.6 GHz. For the first time, we report key high-speed parameters such as the differential gain and the gain compression factor.

机译：在硅上使用2.5毫米长的量子点窄脊形波导激光器进行的小信号实验显示，调制带宽为1.6 GHz。我们首次报告了关键的高速参数，例如差分增益和增益压缩系数。

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来源
《International Semiconductor Laser Conference》|2018年|1-2|共2页
会议地点 Santa Fe(US)
作者
Constanze Hantschmann; Peter P. Vasilev; Siming M. Chen; Mengya Liao; Alwyn J. Seeds; Huiyun Liu; Richard V. Penty; Ian H. White;
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作者单位

Centre for Photonic Systems Department of Engineering University of Cambridge 9 JJ Thomson Avenue Cambridge CB3 0FA UK;

Also associated with the PN Lebedev Physical Institute 53 Leninsky Prospect Moscow 119991 Russia;

Department of Electronic and Electrical Engineering University College London Torrington Place London WC1E 7JE UK;

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关键词
Quantum dot lasers; Modulation; Silicon; Bandwidth; Resonant frequency; Photonics;

机译：量子点激光器；调制;硅;带宽;共振频率光子学;

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专利

1. Understanding the Bandwidth Limitations in Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon [J] . Hantschmann Constanze, Vasilev Peter P., Wonfor Adrian, Journal of Lightwave Technology . 2019,第3期

机译：了解硅上的单片1.3 μ m InAs / GaAs量子点激光器的带宽限制
2. Electrically pumped continuous-wave 1.3 μm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates [J] . Siming Chen, Mengya Liao, Mingchu Tang, Optics express . 2017,第5期

机译：在轴Si（001）衬底上单片生长的电泵浦连续波1.3μmInAs / GaAs量子点激光器
3. Optimisation of the dislocation filter layers in 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates [J] . Mingchu Tang, Jiang Wu, Siming Chen, Optoelectronics, IET . 2015,第2期

机译：在Si衬底上整体生长的1.3μmInAs / GaAs量子点激光器中位错滤光层的优化
4. Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon [C] . Constanze Hantschmann, Peter P. Vasilev, Siming M. Chen, IEEE International Semiconductor Laser Conference . 2018

机译：硅上单片1.3μminas / gaas量子点激光器的动态特性
5. Monolithic Integration of InAs Quantum Dot Lasers on Silicon Substrates [D] . Wan, Yating. 2017

机译：INAS量子点激光在硅基板上的单片集成
6. Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers [O] . Xiang-Bin Su, Ying Ding, Ben Ma, 2018

机译：消除用于制备1.3μm量子点激光器的InAs / GaAs量子点中的双峰尺寸
7. Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon [O] . Constanze Hantschmann, Peter P. Vasilev, Siming M. Chen, 2018

机译：硅上单片1.3μminas / gaas量子点激光器的动态特性

Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon

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