Temperature Characteristics of 1.3-μm Membrane Lasers on InP-on-Insulator Substrate

机译：绝缘体上InP衬底上1.3μm膜激光器的温度特性

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摘要

We have developed energy-efficient 1.3-μm membrane lasers on Si for datacom applications. We employ InGaAlAs-based MQWs as an active material to improve the temperature characteristics and modulation speed. We achieved lasing at up to 95°C and direct modulation up to 40-Gbit/s at 25°C.

机译：我们已经开发了用于数据通信应用的高效节能的1.3μm硅薄膜激光器。我们采用基于InGaAlAs的MQW作为活性材料来改善温度特性和调制速度。我们在高达95°C的环境下实现了激光发射，在25°C的环境下实现了高达40 Gbit / s的直接调制。

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来源
《International Semiconductor Laser Conference》|2018年|1-2|共2页
会议地点 Santa Fe(US)
作者
Takuro Fujii; Hidetaka Nishi; Koji Takeda; Erina Kanno; Koichi Hasebe; Tomonari Sato; Takaaki Kakitsuka; Hiroshi Fukuda; Tai Tsuchizawa; Shinji Matsuo;
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NTT Device Technology Labs NTT Corporation 3-1 Morinosato-Wakamiya Atsugi-shi Kanagawa 243-0198 Japan;

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关键词
Vertical cavity surface emitting lasers; Modulation; Substrates; Silicon; Quantum well devices;

机译：垂直腔表面发射激光器；调制;基材；硅;量子阱设备;

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专利

1. High-Characteristic-Temperature 1.3-μm-Band Laser on an InGaAs Ternary Substrate Grown by the Traveling Liquidus-Zone Method [J] . Arai M., Watanabe T., Yuda M., IEEE journal of selected topics in quantum electronics . 2007,第期

机译：液相线-区方法生长的InGaAs三元衬底上的高温度1.3μm波段激光器
2. Very high characteristic temperature and constant differential quantum efficiency 1.3-/spl mu/m GaInAsP-InP strained-layer quantum-well lasers by use of temperature dependent reflectivity (TDR) mirror [J] . Kasukawa A., Iwai N. IEEE journal of selected topics in quantum electronics . 1995,第2期

机译：通过使用温度相关反射率（TDR）反射镜，可实现非常高的特征温度和恒定的1.3- / splμm/ m的GaInAsP-InP应变层量子阱激光器的差分量子效率
3. Temperature Characteristics of Gain Profiles in 1.3-$ muhbox{m} p$-Doped and Undoped InAs/GaAs Quantum-Dot Lasers [J] . Wang R., Tong C. Z., Yoon S. F., Electron Device Letters, IEEE . 2009,第12期

机译：1.3- $ muhbox {m} p $掺杂和未掺杂的InAs / GaAs量子点激光器中增益曲线的温度特性
4. Temperature Characteristics of 1.3-μm Membrane Lasers on InP-on-Insulator Substrate [C] . Takuro Fujii, Hidetaka Nishi, Koji Takeda, IEEE International Semiconductor Laser Conference . 2018

机译：在绝缘体基板上1.3-μm膜激光器的温度特性
5. Deposition of high-temperature superconducting thin films on metallic and nometallic substrates by laser ablation. [D] . Wu, Anqi. 1994

机译：通过激光烧蚀在金属和非金属基板上沉积高温超导薄膜。
6. Effects of Substrate Preheating Temperatures on the Microstructure Properties and Residual Stress of 12CrNi2 Prepared by Laser Cladding Deposition Technique [O] . Chenggang Ding, Xu Cui, Jianqiang Jiao, 2018

机译：基底预热温度对激光熔覆沉积技术制备的12CrNi2的组织性能和残余应力的影响
7. Optimizations of Defect Filter Layers for 1.3-μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates [O] . Tang, M., Chen, S., Wu, J., 2016

机译：用于在si衬底上单片生长的1.3μmInas/ Gaas量子点激光器的缺陷滤光层的优化
8. Tribological Characteristics of Sputtered Au/Cr Films on Alumina Substrates atElevated Temperatures [R] . Benoy, P. A., Dellacorte, C. 1993

机译：高温下铝基溅射au / Cr薄膜的摩擦学特性

Temperature Characteristics of 1.3-μm Membrane Lasers on InP-on-Insulator Substrate

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