Enhancement of Driving Capability of Gate Driver Using GaN HEMTs for High-Speed Hard Switching of SiC Power MOSFETs

摘要

A high-speed gate driver based on GaN-HEMTs push-pull configuration has been proposed to drive a SiC power MOSFET at high switching frequency. In this study, we investigate the influences of parasitic inductances of the GaN HEMTs on the output voltage of the GaN-based gate driver. The parasitic inductances at the gate, source, and drain terminals of the GaN HEMTs are analyzed with SPICE simulation. It is found that the parasitic inductances at the gate and source terminals of the GaN HEMT have almost no influences on the output waveform of the gate driver, while the parasitic inductances at the drain terminal of the GaN HEMT produce large voltage oscillations of the output voltage.