Effects of Hydrogenation-Related Processes on Low Temperature Polysilicon TFTs Stability

摘要

Hydrogenation was an effective way to reduce the density of inter- and intra-grain defect in polysilicon TFTs. In this study, the effects of hydrogenation related process were characterized for the low temperature polysilicon TFTs. The impact of hot carrier reliability and long-term stability related hydrogenation was also considered.