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Negative Magnetoresistance Effect in Pb1-xMnxTe(Cr)and Pb1-xMnxTe(Yb)

机译:Pb1-xMnxTe(Cr)和Pb1-xMnxTe(Yb)的负磁阻效应

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We report on the observation of a strong negativemagnetoresistance effect in Pb1-xMnxTe(Yb) and Pb1-xMnxTe(Cr) at lowtemperatures. The main features of the effect are analogous in both cases.The sample resistance at the liquid helium temperature quickly drops (by~~ 3 orders of magnitude in Pb1-xMnxTe(Yb), and by ~ 30% inPb1-xMnxTe(Cr)) when the magnetic field increases up to 5-6 T, withsubsequent rise as the field increases to 17.5 T. The effects observed aredefined by specifics of conductivity via the impurity band. They mostlikely originate from the shift of the chemical potential with respect to themobility edge in the impurity band in a magnetic field.
机译:我们报告了在低温下对Pb1-xMnxTe(Yb)和Pb1-xMnxTe(Cr)的强负磁阻效应的观察。在这两种情况下,这种效应的主要特征是相似的。在液氦温度下,样品电阻迅速下降(Pb1-xMnxTe(Yb)下降了~~ 3个数量级,Pb1-xMnxTe(Cr)下降了〜30个数量级)。当磁场增加到5-6 T时,随后随磁场增加到17.5 T而增加。观察到的效果由通过杂质带的电导率的特性定义。它们最有可能源自磁场中杂质带中化学势相对于迁移率边缘的移动。

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