首页> 外文会议>International conference on the physics of semiconductors;ICPS >Screening properties of a two-dimensional electron gasaround integer filling factors
【24h】

Screening properties of a two-dimensional electron gasaround integer filling factors

机译:整数填充因子附近的二维电子气的筛选性质

获取原文

摘要

Magneto-optical emission of a two-dimensional electron gas inmodulation-doped GaAs/GaAlAs single hetero-structures reveals intensitychanges associated to the ground-state filling factor. In particular, therecombination of electrons in the second confined sub-band with photoexcitedholes trapped at Be acceptors shows a rich structure determined bythe Landau-level occupancy of the lowest electron sub-band. Below fillingfactor 2 the free-hole recombination appears abruptly, as in Be-free samples,at a magnetic field which depends on the Be distance to the hetero-junction.The present results give information about the filling factor dependentscreening properties of the electron gas, which are thought to determine theobserved non-linear properties in the magneto-optics.
机译:二维电子气调制掺杂的GaAs / GaAlAs单一异质结构的磁光发射揭示了与基态填充因子相关的强度变化。特别地,第二受限子带中的电子与捕获在Be受体处的光激发空穴的结合显示出由最低电子子带的Landau能级占据所确定的丰富结构。低于填充因子2时,如在无Be样品中一样,在取决于Be到异质结的Be磁场的磁场下,自由空穴复合突然出现。本研究结果提供了有关依赖于填充因子的电子气屏蔽性能的信息,它们被认为确定了磁光中观察到的非线性特性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号