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29 29Si hyperfine interaction of two paramagnetic centersin Neutron-Irradiated SiliconSi

机译:中子辐照的硅中两个顺磁中心的29 29Si超精细相互作用

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An electron spin resonance study has been carried out of twoparamagnetic centers in silicon. The first, Si-B3, is a tetragonal center ofwhich the full angular dependence of known and newly resolved 29 29Sihyperfine structure is revealed. Spectra simulations show that the defect wavefunction has its strongest hf interaction with two equivalent Si sites in a firstshell, a next interaction with four equivalent Si sites in a second shell, and alast interaction with eight equivalent Si sites in a third shell. The data complywith former theoretical calculations on the tetra-interstitial (I4), hence it isidentified with B3. The second unknown trigonal center, labelled Si-B5,exhibits two hf doublets corresponding with four and six equivalent Si sites.The tetra-interstitial I3 is proposed as a provisional defect model.
机译:已经对硅中的两个顺磁中心进行了电子自旋共振研究。第一个是Si-B3,是一个四边形中心,其中心角与已知的和新近解析的29 29Sihyperfine结构完全相关。光谱模拟表明,缺陷波函数与第一壳中的两个等效Si位置的相互作用最强,第二壳中的四个等效Si位置的相互作用最次,而第三壳中的八个等效Si位置的相互作用最强。该数据符合先前关于四间隙(I4)的理论计算,因此用B3标识。第二个未知的三角中心,标记为Si-B5,具有两个hf双峰,分别对应四个和六个等效Si位点。提出了四间隙I3作为临时缺陷模型。

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