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Investigation of an open quantum dot using a Coulombblockade quantum dot detector in a bilayer electron system

机译:在双层电子系统中使用库仑阻断量子点检测器研究开放量子点

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A system comprising of a closed quantum dot in the upper layer of a GaAs-AlxGa1_ xAs bilayer electron system coupled electrostatically to an open quantum dot in thelower layer was investigated as a back gate voltage was swept. Simultaneous independentmeasurements of the conductances of the two layers were performed at temperatures less than50mK. Coulomb blockade conductance oscillations in the upper quantum dot were used tomeasure changes in the electrostatic screening properties of the lower open quantum dot. Thisscreening depended both on the geometry and the quantum mechanics of the open dot. Theexperimental results were compared to a three dimensional model based on the band structureand electrostatics of the semiconductor heterostructure.
机译:在扫描背栅电压时,研究了一个系统,该系统包括一个与上层中的一个开放量子点静电耦合的GaAs-AlxGa1_xAs双层电子系统的上层中的一个封闭量子点。在小于50mK的温度下同时独立测量两层的电导率。高量子点中的库仑阻塞电导振荡用于测量低开放量子点的静电屏蔽性能的变化。该筛选取决于开放点的几何形状和量子力学。基于带状结构和半导体异质结构的静电,将实验结果与三维模型进行了比较。

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