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Discharge characteristics of MgO thin films deposited by sputtering

机译:溅射沉积MgO薄膜的放电特性

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The discharge characteristics were obtained for MgO thin films deposited on quartz glass substrates at the sputtering gas of Ar and Ar/20%O2 mixture. The MgO films were prepared by a RF magnetron sputtering with MgO sintered ceramic target. The breakdown voltages for electrode materials of MgO thin film deposited in Ar and Ar/20%O2 mixture were measured under various Ne pressures with a V-Q Lissajous method. The breakdown voltage of MgO thin films deposited by the sputtering gas of Ar/20%O2 mixture decreases lower than that of Ar. The columnar structure of cross section for MgO thin films deposited by the sputtering gas of Ar/20%O2 mixture is clearly than that of Ar. The columnar structure of MgO thin films· seem to affect the breakdown voltages or the secondary electron emission properties.
机译:对于在Ar和Ar / 20%O 2混合物的溅射气体下沉积在石英玻璃基板上的MgO薄膜获得了放电特性。通过RF磁控溅射与MgO烧结的陶瓷靶来制备MgO膜。用V-Q Lissajous方法在各种Ne压力下测量沉积在Ar和Ar / 20%O2混合物中的MgO薄膜的电极材料的击穿电压。 Ar / 20%O2混合物的溅射气体沉积的MgO薄膜的击穿电压比Ar降低。 Ar / 20%O2混合物的溅射气体沉积的MgO薄膜的截面柱状结构明显比Ar明显。 MgO薄膜的柱状结构似乎影响击穿电压或二次电子发射性能。

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