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Sputtering system for depositing thin film and method for depositing thin film

机译:用于沉积薄膜的溅射系统和沉积薄膜的方法

摘要

A device and a method of facing target sputtering are provided, which can easily change magnetic flux line patterns between facing targets, thereby enabling to conveniently perform a plurality of kinds of sputtering such as facing target sputtering with facing mode, facing target sputtering with mixed mode composed of facing mode and magnetron mode. Thus, the device and the method of facing target sputtering effective for each material is provided. The sputtering device for forming a thin film in which a pair of target holders 2 having targets 1 arranged thereon is provided so as to arrange targets faced to each other. A pole group including a plurality of pole elements having at least a different pole direction is arranged at the back side of the target holders opposite to surfaces on which the targets are arranged. The pole elements are any of a permanent magnet 4, a yoke 7, 8 and an electromagnet 13 or a combination of them. The device includes magnetic flux-line pattern control means for changing magnetic flux-line pattern 5 between the targets faced to each other by moving at least part of the pole elements or changing at least either one of field intensity and direction.
机译:提供一种面对靶溅射的装置和方法,其可以容易地改变面对靶之间的磁通线图案,从而使得能够方便地执行多种溅射,诸如具有面对模式的面对靶溅射,具有混合模式的面对靶溅射。由面对模式和磁控管模式组成。因此,提供了对每种材料有效的面对靶溅射的装置和方法。设置用于形成薄膜的溅射装置,在该溅射装置中,布置有彼此相对的靶材,该靶材支架对具有其上的靶材 1 。在靶支架的与配置有靶的面相反的背面侧,配置有包括具有至少不同的磁极方向的多个磁极元件的磁极组。磁极元素可以是永磁体 4 ,磁轭 7、8 和电磁体 13 或它们的组合。该装置包括磁通线图案控制装置,用于通过移动至少一部分磁极元件或改变场强中的至少一个来改变彼此面对的目标之间的磁通线图案 5 。和方向。

著录项

  • 公开/公告号US8663431B2

    专利类型

  • 公开/公告日2014-03-04

    原文格式PDF

  • 申请/专利权人 SHINICHI MOROHASHI;

    申请/专利号US20090992848

  • 发明设计人 SHINICHI MOROHASHI;

    申请日2009-05-14

  • 分类号C23C14/00;C23C14/32;

  • 国家 US

  • 入库时间 2022-08-21 15:59:33

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