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机译:MgO溅射功率对射频磁控溅射生长的MgZnO薄膜特性的依赖性
School of Materials Science and Engineering, Kyungpook National University, 1370 Sangyeok-dong, Buk-gu, Daegu 702-701, Republic of Korea;
School of Materials Science and Engineering, Kyungpook National University, 1370 Sangyeok-dong, Buk-gu, Daegu 702-701, Republic of Korea;
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;
Department of Nano Semiconductor Engineering, Korea Maritime University, Busan 606-791, Republic of Korea;
MgZnO; Co-sputtering; MgO interfacial layer; TEM;
机译:ZnO缓冲层对射频磁控溅射在Si(100)衬底上生长的MgZnO薄膜特性的影响
机译:温度对射频磁控溅射生长铌掺杂MgZnO薄膜的影响
机译:基于射频磁控溅射生长的MgZnO薄膜的紫外光电探测器
机译:射频磁控溅射系统生长的Nb掺杂MgZnO薄膜的表征
机译:射频磁控溅射生长的GaN薄膜的特性用于制造AlGaN / GaN HEMT生物传感器
机译:射频直流和射频叠加直流磁控溅射沉积的透明导电掺铝ZnO多晶薄膜的载流子输运和晶体学取向特征
机译:高功率脉冲磁控溅射和直流磁控溅射反应溅射ZrH2薄膜