The Optical and Electrical Properties ITO Thin Film

机译：光电性能ITO薄膜

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) is characteristic for the layers deposited at the substrate temperature 400°C. The optimization of the layer optical and electrical properties is ensured by the top main charge carrier mobility μ=44 cm

机译：）是在衬底温度为400°C时沉积的层的特征。顶部主电荷载流子迁移率μ= 44 cm确保了层的光学和电性能的优化

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来源
《International Conference on Intelligent Energy and Power Systems》|2018年|229-234|共6页
会议地点 Kharkiv(UA)
作者
A. Khrypunova; D. Kudii; I. Khrypunova;
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National Technical University «Kharkov Polytechnic Institute» Kharkov Ukraine;

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关键词
cadmium compounds; carrier mobility; electrical resistivity; II-VI semiconductors; indium compounds; semiconductor growth; semiconductor thin films; solar cells; sputter deposition; tin compounds; wide band gap semiconductors;

机译：镉化合物承运人流动性；电阻率II-VI半导体；铟化合物半导体增长；半导体薄膜；太阳能电池;溅射沉积锡化合物宽带隙半导体;

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The Optical and Electrical Properties ITO Thin Film

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