The study of the transient radiation effects on electronic devices caused by pulsed high energy gamma-ray

摘要

In this study, we carried out SPICE simulation and transient radiation tests for identify failure situation by a transient radiation effect on electronic devices due to high energy ionizing radiation pulse induced on electronic devices. This experiments were carried out using a 60 MeV electron beam pulse of the LINAC(Linear Accelerator) facility in the Pohang Accelerator Laboratory. In this experiment test, we has found that a serious failure as a burn-out effect due to overcurrent on the partial electronic devices. Also we has found that a temporary error due to ionizing effect on the other electronic devices. Similar to these experimental results, the result of SPICE Simulation in NAND gate has found that the latch-up phenomena could be checked in more than 7.0×10