30 GHz Monolithically Integrated Frequency Multiplier Based on GaN Planar Schottky Barrier Diode

摘要

A 30 GHz monolithically integrated frequency multiplier based on the planar GaN Schottky barrier diode are successfully fabricated. The impact of material parameters and anode dimension on the frequency multiplier are investigated. The use of the monolithic integrated approach significantly improves the performance of the GaN frequency multiplier. The frequency multiplier gains a more than 3 dBm output power with frequency range from 21.5 to 39.5 GHz. The maximum output power is 9.68 dBm at 28.5 GHz with efficiency up to 16.1%. At the central frequency of 30 GHz, the output power is 9.64 dBm with 15.0% efficiency.