Measurement of thickness of native silicon dioxide with a scanning electron microscope

摘要

We are describing a method of measuring thickness of a native silicon dioxide film using a scanning electron microscope. The method consists of etch removal of native silicon dioxide from the surface of trenches in silicon with a right-angled profile, with a subsequent measurement of an increase in trench width. The thickness of a native silicon dioxide film measured with the help of this method turned out to be 2.39 ±0.12 nm.