Surface states passivation for and regrowth around nanoposts formed for the fabrication of InP-based intersubband quantum box lasers

机译：用于制备基于InP的子带间量子盒激光器的纳米柱的表面态钝化和再生长

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Passivation of interfaces corresponding to the nanoposts' sidewalls in InP-based intersubband quantum-box (IQB) lasers has resulted in interfacial-state densities < 10¹¹/cm². High-quality regrowths of semi-insulating InP around dry-etched, passivated, 40 nm-diameter nanoposts were realized.

机译：在基于InP的子带间量子盒（IQB）激光器中，对应于纳米柱侧壁的界面钝化，导致界面态密度<10 ^{11 / cm ^{2 。实现了干法刻蚀，钝化的40 nm直径纳米柱周围的半绝缘InP的高质量再生长。}}

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《Indium Phosphide amp; Related Materials, 2009. IPRM '09》|2009年|83-86|共4页
会议地点 Newport Beach CA(US);Newport Beach CA(US)
作者
Rathi M.K.; Tsvid G.; Shin J.C.; Khandekar A.A.; Botez D.; Kuech T.F.;
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Dept. of Chem. Biol. Eng., Univ. of Wisconsin-Madison, Madison, WI;

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III-V semiconductors; etching; gallium arsenide; indium compounds; interface states; nanostructured materials; nanotechnology; passivation; quantum dot lasers; semiconductor quantum dots; surface states; InGaAs-InP; dry-etching; interfacial-state densities; intersubband quantum box lasers; nanoposts; size 40 nm; surface states passivation;

机译：III-V半导体;蚀刻;砷化镓;铟化合物;界面态;纳米结构材料;纳米技术;钝化;量子点激光器;半导体量子点;表面态; InGaAs-InP;干法蚀刻;界面态密度;子带间量子盒激光;纳米柱;尺寸40 nm;表面态钝化;

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专利

1. SEMICONDUCTOR LASERS FOR EFFICIENT AND RELIABLE CW OPERATION IN THE MID- AND FAR-INFRARED: INTERSUBBAND QUANTUM-BOX LASERS [J] . DAN BOTEZ International journal of nanoscience . 2007,第3a4期

机译：在中红外和远红外中进行有效且可靠的连续波操作的半导体激光器：带间量子盒激光器
2. Progress towards intersubband quantum-box lasers for highly efficient continuous wave operation in the mid-infrared [J] . Dan Botez, Gene Tsvid, Mithun DSouza, Journal of Nanophotonics . 2009,第Null期

机译：用于中红外高效连续波操作的子带间量子盒激光器的进展
3. Intersubband quantum-box semiconductor lasers: High-power, efficient CW sources for the 3-10-mu m wavelength range [J] . Botez D Laser Physics: An International Journal devoted to Theoretical and Experimental Laser Research and Application . 2005,第7期

机译：子带间量子盒半导体激光器：适用于3-10-μm波长范围的高功率，高效CW源
4. SURFACE STATES PASSIVATION FOR AND REGROWTH AROUND NANOPOSTS FORMED FOR THE FABRICATION OF InP-BASED INTERSUBBAND QUANTUM BOX LASERS [C] . M. K. Rathi, G. Tsvid, J. C. Shin, IEEE International Conference on Indium Phosphide Related Materials . 2009

机译：用于制造基于INP的三角形量子箱激光器的纳米孔周围的表面状态钝化和再生
5. Spectral gain measurements of quantum confined emitters, and design and fabrication of intersubband quantum box laser structures [D] . Tsvid, Gene 2008

机译：量子约束发射器的光谱增益测量以及子带间量子盒激光器结构的设计与制造
6. Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy [O] . Marcin Kurka, Michał Rygała, Grzegorz Sęk, 2020

机译：通过采用光学光谱分程利用基于INP的量子级联激光器的InGaAs层的非接触式测量
7. Progress towards intersubband quantum-box lasers for highly efficient continuous wave operation in the mid-infrared [O] . Plant, Jason J., Turner, George W., Meyer, Jerry R., 2008

机译：用于中红外高效连续波操作的子带间量子盒激光器的研究进展

Surface states passivation for and regrowth around nanoposts formed for the fabrication of InP-based intersubband quantum box lasers

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