Low dark current SWIR photodiode with InGaAs/GaAsSb Type II quantum wells grown on InP substrate

机译：具有在InP衬底上生长的InGaAs / GaAsSb II型量子阱的低暗电流SWIR光电二极管

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For sensing short wavelength infrared (SWIR) region (1.0-2.5 mum), photodiodes with In_0.53Ga_0.47As/GaAs_0.5Sb_0.5 type II quantum well structure grown on InP substrate by solid source molecular beam epitaxy (MBE), were successfully fabricated. Low dark current was obtained by improving GaAsSb crystalline quality.

机译：为了感测短波红外（SWIR）区域（1.0-2.5 mum），使用In _{0.53 Ga _{0.47 As / GaAs _{0.5 Sb 0.5 Ⅱ型量子阱结构。通过改善GaAsSb的晶体质量，获得了低暗电流。}}}

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《Indium Phosphide amp; Related Materials, 2009. IPRM '09》|2009年|149-152|共4页
会议地点 Newport Beach CA(US);Newport Beach CA(US)
作者
Inada H.; Miura K.; Nagai Y.; Tsubokura M.; Moto A.; Iguchi Y.; Kawamura Y.;
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Transm. Devices RD Labs., Sumitomo Electr. Ind., Ltd., Osaka;

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III-V semiconductors; dark conductivity; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; photodiodes; semiconductor quantum wells; Insub0.53/subGasub0.47/subAs-GaAssub0.5/subSbsub0.5/sub; MBE; SWIR photodiode; dark current; infrared wavelength; solid source molecular beam epitaxy; type II quantum well structure;

机译：III-V型半导体;暗电导率;砷化镓;镓化合物;铟化合物;分子束外延生长;光电二极管;半导体量子阱; In _{0.53 Ga _{0.47 As-GaAs < sub> 0.5 Sb _{0.5 ; MBE; SWIR光电二极管;暗电流;红外波长;固体源分子束外延; II型量子阱结构;}}}

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专利

1. Low Dark Current SWIR Photodiode with InGaAs/GaAsSb Type II Quantum Wells Grown on InP Substrate [J] . Hiroshi INADA, Kouhei MIURA, Hiroki MORI, SEI Technical Review . 2010,第70期

机译：InP衬底上生长的具有InGaAs / GaAsSb II型量子阱的低暗电流SWIR光电二极管
2. Low Dark Current SWIR Photodiode with InGaAs/GaAsSb Type II Quantum Wells Grown on InP Substrate [J] . Hiroshi INADA, Kouhei MIURA, Hiroki MORI, SEI Technical Review . 2010,第71期

机译：InP衬底上生长的具有InGaAs / GaAsSb II型量子阱的低暗电流SWIR光电二极管
3. Dark current modeling of InP based SWIR and MWIR InGaAs/GaAsSb type-Ⅱ MQW photodiodes [J] . Baile Chen, Jinrong Yuan, A. L. Holmes Jr. Optical and quantum electronics . 2013,第3期

机译：基于InP的SWIR和MWIR InGaAs / GaAsSbⅡ型MQW光电二极管的暗电流建模
4. Low Dark Current SWIR Photodiode with InGaAs/GaAsSb Type II Quantum Wells grown on InP Substrate [C] . H. Inada, K. Miura, Y. Nagai, IEEE International Conference on Indium Phosphide Related Materials . 2009

机译：具有InGaAs / Gaassb II型量子孔的低暗电流旋流光电二极管在INP基板上生长
5. Simulation and Comparison of High Speed GaAsSb-InP and InGaAs-InP Uni-Traveling-Carrier Photodiodes [D] . Guneroglu, Ugur 2019

机译：高速GaAsSb-InP和InGaAs-InP单向载流子光电二极管的仿真与比较
6. The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate [O] . Zhang Shuhui, Wang Lu, Shi Zhenwu, 2012

机译：在InP（100）衬底上生长的GaSb / InGaAs II型量子点的结构和光学性质
7. SWIR/MWIR InP-Based p-i-n Photodiodes with InGaAs/GaAsSb Type-II Quantum Wells [O] . Baile Chen, Weiyang Jiang, Jinrong Yuan, 2015

机译：具有InGaas / Gaassb II型量子阱的sWIR / mWIR Inp基p-i-n光电二极管

Low dark current SWIR photodiode with InGaAs/GaAsSb Type II quantum wells grown on InP substrate

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