Scaling behaviors of 25-NM asymmetrically recessed metamorphic high electron-mobility transistors

摘要

This paper reports the scaling behaviors of 25-nm asymmetrically recessed metamorphic high electron-mobility transistors. By employing an optimized epitaxial design and an asymmetric gate recess, excellent off-state and on-state breakdown voltages have been have been demonstrated for 25-nm high-performance metamorphic high electronmobility transistors. The results reported herein demonstrate that these devices are excellent candidates for ultra-high-frequency power applications.