Improving the CoolMS™ body-diode switching performance with integrated Schottky contacts

摘要

A new approach to improve the CoolMOS™ body-diode reverse-recovery speed is proposed. In this approach, a Schottky contact is integrated into every cell of the CoolMOS™ structure. Incorporation of the cell-distributed Schottky contacts results in a significant improvement in the body-diode recovery speed. The Medici™ mixed-mode simulation results show an over 58% improvement in the reverse-recovery charge of the body-diode in a 600V CoolMOS™. There is no significant sacrifice to the other device characteristics. This approach provides a good solution to improve the body-diode recovery speed of the CoolMOS™ without using the complicated carrier-lifetime-killing techniques.