Improving the CoolMS/spl trade/ body-diode switching performance with integrated Schottky contacts

摘要

A new approach to improve the CoolMOS/spl trade/ body-diode reverse-recovery speed is proposed. In this approach, a Schottky contact is integrated into every cell of the CoolMOS/spl trade/ structure. Incorporation of the cell-distributed Schottky contacts results in a significant improvement in the body-diode recovery speed. The Medici/spl trade/ mixed-mode simulation results show an over 58% improvement in the reverse-recovery charge of the body-diode in a 600V CoolMOS/spl trade/. There is no significant sacrifice to the other device characteristics. This approach provides a good solution to improve the body-diode recovery speed of the CoolMOS/spl trade/ without using the complicated carrier-lifetime-killing techniques.