Fabrication and evaluation of nanoelectromechanicallogical gates

摘要

The design, fabrication and evaluation of logical gates based on electrostatically driven silicon nanoelectromechanical switches are reported. The logic gates including NAND and NOR gates are successfully fabricated by a combination of reactive ion etching and selective tungsten chemical vapor deposition. Those logic gates are composed of nanoelectromechanical switches, which contained three isolated electrodes (source, gate, drain). The operation of the logical gate circuits is demonstrated for NAND and NOR components.