METHOD FOR EVALUATING INSULATION-GATE TYPE TRANSISTOR, METHOD FOR MANUFACTURING THE INSULATION-GATE-TYPE TRANSISTOR, DEVICE FOR EVALUATING CHARACTERISTIC OF INSULATION-GATE TYPE TRANSISTOR, AND COMPUTER READER WITH CHARACTERISTIC EVALUATION PROGRAM RECORDED THEREIN

摘要

PROBLEM TO BE SOLVED: To improve effective channel length and the extraction likelihood ratio of external resistance by determining the true of the threshold voltage of a second insulation-gate type transistor, based on the first optimum estimation value and determining the difference between a mask channel length and the effective channel length and the external resistance from the true of the threshold voltage. ;SOLUTION: The difference in the threshold voltage between a short transistor Sh and a long transistor Lo is virtually set to an amount of shift , and a value DL* of Lm coordinates of a virtual point, a value dL* of Lm intercept, its change ratio dL*, and channel resistance (f) per unit length, and its change ratio f' are obtained according to RtotSh(VgtLo+-VthSh+ VthLo) and RtotLo(VgtLo). When the amount of shift is equal to a difference 0 of the true threshold voltage between the short transistor Sh and the long transistor Lo, a specified expression can be satisfied. In that case, the value DL* of the Lm coordinates at a virtual point near a threshold voltage of VthLo-0 gives true channel shortening DL.;COPYRIGHT: (C)2000,JPO