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外文会议>IEEE Symposium on VLSI Circuits
>A modular 16NM Direct-RF TX/RX Embedding 9GS/S DAC and 4.5GS/S ADC with 90DB Isolation and Sub-80PS Channel Alignment for Monolithic Integration in 5G Base-Station SoC
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A modular 16NM Direct-RF TX/RX Embedding 9GS/S DAC and 4.5GS/S ADC with 90DB Isolation and Sub-80PS Channel Alignment for Monolithic Integration in 5G Base-Station SoC
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机译：具有90DB隔离和低于80PS通道对准的模块化16NM Direct-RF TX / RX嵌入式9GS / S DAC和4.5GS / S ADC，可在5G基站SoC中实现单片集成
This work presents direct-RF TX/RX modular tiles for monolithic integration in 16nm FinFET. The TX tile embeds 4 baseband-to-RF signal chains with 14-bit 9GS/s DACs while the RX tile provides 2 RF-to-baseband signal chains with 13-bit 4.5GS/s ADCs. Each tile includes a low-noise PLL [1] and can support full Nyquist bandwidth. The TX path demonstrates better than -67dBc ACPR when synthetizing a half-loaded band 42 and consumes 700mW. The RX path shows an EVM of 11.6% for the in-band blocking test of the 3.5GHz band and consumes 747mW. These tiles have been integrated in a 372mm
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机译：这项工作提出了用于16nm FinFET中单片集成的直接RF TX / RX模块化模块。 TX磁贴嵌入4个基带到RF信号链和14位9GS / s DAC，而RX磁贴提供2个RF到基带信号链和13位4.5GS / s ADC。每个瓦片都包含一个低噪声PLL [1]，并且可以支持完整的奈奎斯特带宽。合成半负载频段42时，TX路径的ACPR优于-67dBc ACPR，功耗为700mW。 RX路径显示，在3.5GHz频带内的带内阻塞测试中，EVM为11.6％，功耗为747mW。这些瓷砖已集成到372mm
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