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Characterization of a new HV/HR CMOS Sensor in LF150nm Process for the ATLAS Inner Tracker Upgrade

机译:用于ATLAS内部跟踪器升级的LF150nm工艺中的新型HV / HR CMOS传感器的特性

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A HV/HR CMOS detector prototype called LF-CPIX, has been designed in LFoundry 150nm technology. The front-end electronics has been implemented using both NMOS and PMOS transistors, inside the charge collection diode, with a pitch of 250 μm × 50 μm. This demonstrator is an implementation of a matrix of smart pixels where the diode is composed by a Deep Nwell, and P-type substrate is used as a depleted sensor. Three types of pixels have been developed: passive pixels, analog-digital pixels, analog pixels. The analog pixels can be connected to the FE-I4 IC, which is the present readout IC of the innermost ATLAS pixel layers. The different versions of the LF-CPIX demonstrators are described, characterization of the different pre-amplifiers flavors with external injection signal and
机译:采用LFoundry 150nm技术设计了一种称为LF-CPIX的HV / HR CMOS检测器原型。前端电子设备已使用电荷收集二极管内部的NMOS和PMOS晶体管实现,间距为250μm×50μm。该演示器是智能像素矩阵的一种实现,其中二极管由Deep Nwell组成,P型衬底用作耗尽型传感器。已经开发出三种类型的像素:无源像素,模拟数字像素,模拟像素。模拟像素可以连接到FE-I4 IC,这是最里面的ATLAS像素层的当前读出IC。描述了不同版本的LF-CPIX演示器,通过外部注入信号和

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