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首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment >Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade
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Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade

机译:用于ATLAS内部跟踪器升级的150 nm CMOS技术中耗尽的单片像素传感器的特性

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摘要

This work reports on design and performance of a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume. The device used in this work, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade in 2025 for the High Luminosity Large Hadron Collider (HL-LHC). This type of devices has a lower production cost and lower material budget compared to presently used hybrid designs. In this work, the chip architecture will be described followed by the characterization of the different pixel flavors with an external injection signal and an iron source (5.9 keV x-rays).
机译:这项工作报告了在LFoundry 150 nm CMOS工艺中制造的耗尽型单片有源像素传感器(DMAPS)原型的设计和性能。 DMAPS利用现代CMOS技术的高电压和/或高电阻率来实现传感体积的显着减少。这项工作中使用的名为LF-Monopix的设备被设计为一种完全单片传感器的概念验证,该传感器能够在2025年用于高光度大强子对撞机(HL)的ATLAS内部跟踪器升级的外层环境中运行-LHC)。与目前使用的混合设计相比,这种类型的设备具有较低的生产成本和较低的材料预算。在这项工作中,将描述芯片架构,然后通过外部注入信号和铁源(5.9 keV X射线)表征不同的像素风味。

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