首页> 外文会议>IEEE International Conference on Distributed Computing in Sensor Systems(DCOSS 2007); 20070618-20; Santa Fe,NM(US) >Low-Voltage Low-Power Curvature-Corrected Voltage Reference Circuit Using DTMOSTs
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Low-Voltage Low-Power Curvature-Corrected Voltage Reference Circuit Using DTMOSTs

机译:使用DTMOST的低压低功率曲率校正电压基准电路

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摘要

A low-voltage low power voltage reference realized in 0.35μm CMOS technology will be presented. In order to achieve two important goals of low-power high performances bandgap references realized in the newer CMOS technologies - a low supply voltage and a small value of the temperature coefficient, a modified structure using dynamic MOS transistors (equivalent with a virtually lowering of the material bandgap) and a square-root curvature-correction will be implemented. The accuracy of the output voltage will be increased using an Offset Voltage Follower Block as PTAT voltage generator, with the advantage that matched resistors are replaced by matched transistors. The low-power operation of the circuit will be achieved by using exclusively subthreshold-operated MOS devices. Experimental results confirm the theoretical estimations, showing a minimum supply voltage of 2.5V and a temperature coefficient of about 9.4 ppm/K for an extended temperature range (173K < T < 423K).
机译:将介绍采用0.35μmCMOS技术实现的低压低功耗电压基准。为了实现在新的CMOS技术中实现的低功耗高性能带隙基准的两个重要目标-低电源电压和较小的温度系数值,采用了动态MOS晶体管的改进结构(等效于实际上降低了材料带隙)和平方根曲率校正将被实施。使用偏置电压跟随器模块作为PTAT电压发生器,可以提高输出电压的精度,其优点是,匹配的电阻器被匹配的晶体管代替。电路的低功耗工作将通过仅使用亚阈值工作的MOS器件来实现。实验结果证实了理论上的估计,在一个扩展的温度范围(173K <T <423K)下,最小电源电压为2.5V,温度系数约为9.4 ppm / K。

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