Design of Low-Voltage Bandgap Reference Circuits in Multi-Gate CMOS Technologies

摘要

This paper presents design considerations and measurement results for low voltage bandgap reference circuits in a recent multi-gate CMOS technology. Gated p-i-n diodes are used as basic elements, a corresponding model covering temperature dependence is derived. The impact of non-idealities and process variations on circuit performance is analyzed, design guidelines are derived. Low g