Microstrip non-foster circuit high efficiency high power class-J GaN HEMT amplifier

摘要

This paper proposes Microstrip non-Foster circuit (NFC) enhanced high efficiency high power class-J GaN HEMT (gallium nitride high electron mobility transistor) amplifier. The NFC enhances the performance of the power amplifier (PA) by cancelling the power transistor's input parasitic capacitance. The PA was designed based on Cree's CGHV40030FP GaN HEMT biased with drain supply voltage of 50 V at quiescent drain-to-source current (I