Analysis and a Reduction Method of Temporal Noise in the CMOS Image Sensor Readout Chain

摘要

This paper analyzes temporal noise in the CMOS image sensor readout chain. The impact of column capacitors on input-referred noise is discussed as the column capacitors make a major contribution to the area of column circuits. Based on the analysis, a new low-noise design method for CMOS image sensors of cellphones is proposed. By implementing MOM capacitors in the pixel array, the area of column readout circuits is effectively reduced.