Modelling Framework for Parallel SiC Power MOSFETs Chips in Modules developed by Planar Technology

摘要

This paper presents a modelling framework to simulate transients and steady state performance for SiC power MOSFETs modules. The electro-thermal modelling is implemented using Simscape/MATLAB program based on the single chip characteristics provided in the datasheet. The method can easily incorporate multiple chips and module parasitic components providing a tool for module characterization and to support module design optimization. The simulated model is then experimentally validated at different voltage buses and junction temperatures for a novel SiC MOSFET Module design consists of two parallel chips per switch developed using wire-bond free planar technology.