PEDL, College of Electrical Engineering, Zhejiang University, Hangzhou, China;
PEDL, College of Electrical Engineering, Zhejiang University, Hangzhou, China;
PEDL, College of Electrical Engineering, Zhejiang University, Hangzhou, China;
Silicon carbide; Fabrication; Electric fields; Limiting; Junctions; High-voltage techniques; Semiconductor diodes;
机译:基于6.5 kV Si-IGBT / Si-PiN二极管,6.5 kV Si-IGBT / SiC-JBS二极管和10kV SiC-MOSFET / SiC-JBS的大功率中压转换器的设计比较二极管
机译:6500V 4H-SiC JBS二极管的非均匀间距多浮面圆环的设计和制造
机译:具有非均匀浮动极限环端子的接近理论击穿电压的4H-SiC JBS二极管的设计和实验
机译:基于指数变化场限制环的10 kV SiC JBS的设计与实现
机译:高压(> 10 kV)4H-SiC MPS二极管的设计,制造和表征
机译:一个有效的时变过滤器用于不进行重采样的趋势和带宽限制心率变异性速度图:MATLAB开源代码和基于Internet网络的实现
机译:3.5 kV 4H-SiC JBS二极管电气特性设计的影响