The Quality of Thin Gate Oxide was Improved by Plasma Treatment and Low Temperature Annealing

摘要

In this paper, we proposed a novel method to improve the quality of thin oxide films (~20nm). After deposition of oxide films, the oxide films were treated with various kinds of plasma. Beside that, the sample with plasma treatment was annealed at various temperature and time. The I-V and C-V characteristics of oxide films with various plasma treatments and post annealing condition were investigated. The leakage current of thin oxide could be reduced by O2 plasma treatment and post annealing process.