SRAM Yield Sensitivity to Supply Voltage Fluctuations and Its Implications on Vmin

摘要

With technology scaling and migration towards low supply low-power designs, supply voltage and threshold voltage fluctuations are becoming increasingly significant for circuit performance. In this paper, we analyze the sensitivity of statistical performance and yield of 65 nm SRAM designs to these fluctuations. The implications of these fluctuations on Vmin and power budgeting are also studied.