Quantum diffusionof H(D) in semiconductors and metals, and the role of the interactionwith impurities

摘要

The mobility of hydrogen and its isotopes in metals has been the object of investigation for several years, whereas the diffusion studies of H in doped semiconductors started more recently. Although the H diffusion coefficient in metals may be several orders of magnitudes higher than in semicoductors, the dynamics of H in metals and semiconductors presents many common features, like precipitation, trapping by heavier impurities and, as indicated by recent results, quantum tunneling at low temperature.