10 W reliable operation of 808 nm broad-area diode lasers by near field distribution control in a multistripe contact geometry

摘要

High-power diode lasers operating at 808 nm and consisting of a multiple ridge-waveguide structure have been fabricated. Lasers with this structure show a more stable far and near field pattern in comparison to conventional single stripe broad area lasers. A reliable continuous wave operation at room temperature over 8000 h at 8 W and 800 h at 10 W has been achieved with 200 μm stripe width devices.