Preliminary results on Bridgman grown CdZnTe detector crystals assisted by ampoule rotation

摘要

Different rotation profiles were applied to the ampoule during Vertical Bridgman (VB) growth of Cd0.9Zn0.1Te (CZT) forenhancing compositional homogeneity, minimizing radial and axial segregation and stabilizing growth interface. Theradial Zinc (Zn) segregation was significantly minimized. Improvements in the axial Zn segregation were alsonoticeable. The modifications in interface shapes during the growth were prominent from the photoluminescence (PL)studies. Improved grain structure was observed with growths containing lower (0.5 wt. %) initial excess Te; howeverwith higher amount of initial excess Te (7.5 wt. %) high resistivity ingots with improved carrier properties were grownconsistently but with lower single crystal yield. With more intense rotations, resistivity values within the ingot varied byan order of magnitude showing non uniformity in distribution of dopants.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.