Vertical bridge-grown GaAs single crystal growth by rotation of ampoule

摘要

The present invention relates to GaAs single crystal growth by vertical bridge only method by rotation of an ampule, and more particularly to single crystal growth of GaAs which improves single crystal crystallinity of GaAs by rotating a crucible and improves homogeneity in crystal.;It consists of a cylindrical quartz ampoule wrapping the circumference of the GaAs in a vertical direction, a rotating support for rotating the lower portion of the ampoule with a stepping motor, and an upper portion of the ampoule to prevent axial movement during rotation of the ampoule An inner ring and an outer ring are formed so that a plurality of springs are formed between the inner and outer rings.