Electronic transport properties of graphene pn junction and its electron optics

摘要

The electronic transport properties of graphene pn junctions are examined using the non-equilibrium green's function (NEGF) simulation approach. We then review the basic physics involved in the conductance modulation of a graphene pn junction. The understanding derived from these studies sets the stage for exploring the potential applications of Klein tunneling, negative refractive index, and total internal reflection for realization of novel electron optics devices and spatial manipulation of current flow.