Electronic transport and thermoelectric properties in a superlattice junction based graphene-In2Te2 nanoribbon bilayer

摘要

Prompted by recent reports on the electronic band structure of graphene-hexagonal indium chalcogenide bilayer, the electronic transport and thermoelectric properties for a superlattice junction based-graphene-In2Te2 nanoribbon bilayer are investigated theoretically. By using ab initio calculations combining with nonequilibrium Green's function method, our important result here is that these superlattice junctions, regardless of their chirality and width, can exhibit a metallic behavior, as well as large current with linear increase under low bias. This phenomenon of current is particularly significant for both 7-AGNRBL and 8-AGNRBL systems. Interestingly, the negative differential resistance can be achieved in 8-ZGNRBL junction. Furthermore, the conductance, electronic contribution to the thermal conductance and Seebeck coefficient are sensitive to the chirality and width of AGNRBL as well as the temperature. When the temperature rises, the electronic contribution to the thermal conductance rapidly increases, while the Seebeck coefficient sharply decreases.