Bistable Defects as the Cause for NBTI and RTN

摘要

Over the last few decades convincing evidence has been collected demonstrating that the oxide reliability is most seriously affected by hole trapping into defects. Recently, valuable information has been delivered by a newly developed measurement technique called time-dependent defect spectroscopy (TDDS), which allows to analyze the behavior of single defects. It indicates the existence of additional metastable defect configurations which are necessary to explain various features seen in TDDS. In this study, it will be shown that these bistable defects may also be the origin of noise phenomena, such as temporary and anomalous random telegraph noise observed in MOSFETs.