Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova, Italy;
Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova, Italy;
Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova, Italy;
Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova, Italy;
Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova, Italy;
Ferdinand-Braun-Institut Leibniz-Institut fuer Hoechstfrequenztechnik Gustav-Kirchhoff-Strasse 4 12489 Berlin - Germany;
Ferdinand-Braun-Institut Leibniz-Institut fuer Hoechstfrequenztechnik Gustav-Kirchhoff-Strasse 4 12489 Berlin - Germany;
Ferdinand-Braun-Institut Leibniz-Institut fuer Hoechstfrequenztechnik Gustav-Kirchhoff-Strasse 4 12489 Berlin - Germany;
Ferdinand-Braun-Institut Leibniz-Institut fuer Hoechstfrequenztechnik Gustav-Kirchhoff-Strasse 4 12489 Berlin - Germany;
Ferdinand-Braun-Institut Leibniz-Institut fuer Hoechstfrequenztechnik Gustav-Kirchhoff-Strasse 4 12489 Berlin - Germany;
Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova, Italy;
机译:GaN基功率HEMT中的可靠性和寄生虫问题:综述
机译:栅极部分凹陷的GaN基MIS HEMT中的陷印和可靠性问题
机译:用于电源应用的D型GaN基MIS-HEMT的陷印和可靠性评估
机译:基于GaN的功率HEMT:寄生,可靠性和高场问题
机译:高功率电子设备的建模与鉴定:闪光沸腾和GAN HEMT可靠性造型激光二极管的系统分析
机译:宽带隙GaN基HEMT功率器件中取决于高温操作的阈值电压稳定性的模型开发
机译:GaN基HEMT中的未解决问题:性能,寄生性和可靠性