1000V Vertical JFET Using Bulk GaN

摘要

Bulk GaN substrates with low defect density are now commercially available. This material enables the fabrication of vertical GaN devices with high breakdown voltage, and excellent electrical performance and power device figure of merit. In this paper, we present a 1000V Vertical JFET that has a positive threshold of 1V. The normally-off FET integrates a hetero-junction in the design to improve the transconductance and enable efficient switching operation into the 10s of MHz.