Analysis of the deep level responsible for the degradation of InGaN-based laser diodes by DLTS

摘要

Recent studies demonstrated that degradation of InGaN-based laser diodes is due to an increase in non-radiative recombination rate within the active layer of the devices, due to the generation of defects. The aim of this paper is to show - by DLTS - that the degradation of InGaN-based laser diodes is strongly correlated to the increase in the concentration of a deep level located within the active region. The activation energy of the detected deep level is 0.35-0.45 eV. Hypothesis on the nature of this deep level are presented in the paper.