Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA;
Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA;
Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA;
Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA;
Center for Optical Technologies, Department of Physics, Lehigh University, Bethlehem, PA 18015, USA;
Center for Optical Technologies, Department of Physics, Lehigh University, Bethlehem, PA 18015, USA;
Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA;
机译:纤锌矿型InGaN交错量子阱的激子特性,用于发光二极管
机译:交错式InGaN量子阱发光二极管的自发发射和特性
机译:高效交错式530 nm InGaN / InGaN / GaN量子阱发光二极管
机译:线性交错InGaN量子阱发光二极管的阴极发光特性
机译:以极性,半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
机译:自组装InGaN量子点的宽带全色单片InGaN发光二极管
机译:通过在宽incan最后的量子井中减少载体密度,通过减少载体密度来朝着C型极性IngaN发光二极管的超低效率下垂
机译:交错InGaN量子阱发光二极管提高辐射效率。